IRG7PH42UPBF transistor equivalent, insulated gate bipolar transistor.
* Low VCE (ON) trench IGBT technology
* Low switching losses
* Maximum junction temperature 175 °C
* Square RBSOA
* 100% of the parts tested for ILM <.
* Suitable for a wide range of switching frequencies due to
low VCE (ON) and low switching losses
* Rugged trans.
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